Invention Application
- Patent Title: Semiconductor integrated circuit device and method of producing the same
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Application No.: US12156042Application Date: 2008-05-29
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Publication No.: US20080237646A1Publication Date: 2008-10-02
- Inventor: Shinya Tokunaga , Shigeki Furuya , Yuuji Hinatsu
- Applicant: Shinya Tokunaga , Shigeki Furuya , Yuuji Hinatsu
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Priority: JP2000-317038 20001017
- Main IPC: H01L27/088
- IPC: H01L27/088

Abstract:
A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cells is constituted by using only upper n (n
Information query
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