Invention Application
- Patent Title: NON-VOLATILE MEMORY AND METHOD OF FABRICATING SAME
- Patent Title (中): 非易失性存储器及其制造方法
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Application No.: US11837361Application Date: 2007-08-10
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Publication No.: US20080029808A1Publication Date: 2008-02-07
- Inventor: Hee-Seog JEON , Seung-Beom YOON , Jeong-Uk HAN
- Applicant: Hee-Seog JEON , Seung-Beom YOON , Jeong-Uk HAN
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR2004-0075907 20040922
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
In one embodiment, a semiconductor device includes a semiconductor substrate having a first junction region and a second junction region. An insulated floating gate is disposed on the substrate. The floating gate at least partially overlaps the first junction region. An insulated program gate is disposed on the floating gate. The program gate has a curved upper surface. The semiconductor device further includes an insulated erase gate disposed on the substrate and adjacent the floating gate. The erase gate partially overlaps the second junction region.
Public/Granted literature
- US07586146B2 Non-volatile memory and method of fabricating same Public/Granted day:2009-09-08
Information query
IPC分类:
