发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11790747申请日： 2007-04-27
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公开(公告)号： US20070254480A1公开(公告)日： 2007-11-01
- 发明人: Tomoko Matsuda , Takashi Ide , Hiroshi Kimura
- 申请人： Tomoko Matsuda , Takashi Ide , Hiroshi Kimura
- 申请人地址： JP KANAGAWA
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KANAGAWA
- 优先权： JP2006-126085 20060428
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/44 ; H01L23/48
摘要：
A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The bottom NiSi region provided in contact with silicon surface, and containing substantially no nitrogen. The top NiSi region is a nitrided NiSi region provided in contact with the bottom NiSi region, and containing nitrogen. The NiSi layer has a total thickness of 50 nm or below.
公开/授权文献
- US07879722B2 Semiconductor device and method of manufacturing the same 公开/授权日：2011-02-01
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