Invention Application
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11715961Application Date: 2007-03-09
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Publication No.: US20070218586A1Publication Date: 2007-09-20
- Inventor: Atsushi Yoshimura , Tadanobu Okubo , Shigetaka Onishi
- Applicant: Atsushi Yoshimura , Tadanobu Okubo , Shigetaka Onishi
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Priority: JPP2006-073141 20060316
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.
Public/Granted literature
- US07736999B2 Manufacturing method of semiconductor device Public/Granted day:2010-06-15
Information query
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