Invention Application
- Patent Title: Magnetoresistive effect element and magnetic memory device
- Patent Title (中): 磁阻效应元件和磁存储器件
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Application No.: US11338889Application Date: 2006-01-25
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Publication No.: US20070076469A1Publication Date: 2007-04-05
- Inventor: Hiroshi Ashida , Masashige Sato , Shinjiro Umehara , Kazuo Kobayashi
- Applicant: Hiroshi Ashida , Masashige Sato , Shinjiro Umehara , Kazuo Kobayashi
- Applicant Address: JP Kawasaki 211-8588
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki 211-8588
- Priority: JP2005-269896 20050916
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
Public/Granted literature
- US07382643B2 Magnetoresistive effect element and magnetic memory device Public/Granted day:2008-06-03
Information query
