发明申请
- 专利标题: Level shift circuit and semiconductor device
- 专利标题(中): 电平移位电路和半导体器件
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申请号: US11337481申请日: 2006-01-24
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公开(公告)号: US20070046357A1公开(公告)日: 2007-03-01
- 发明人: Yoshiaki Shimizu , Hisao Suzuki
- 申请人: Yoshiaki Shimizu , Hisao Suzuki
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 优先权: JP2005-244562 20050825
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A level shift circuit for sustaining the activation and inactivation response of a transistor with respect to an input signal in a preferable manner. The level shift circuit includes a shift circuit for converting an input signal having a first voltage to an output signal having a second voltage that is higher than the first voltage. The voltage generation circuit includes a control voltage generation circuit, for generating control voltage having a generally constant voltage level irrespective of the level of a power supply voltage, and a bias generation circuit. The bias generation circuit generates bias voltage so that the node voltage of the shift circuit is substantially equalized with the control voltage.
公开/授权文献
- US07589578B2 Level shift circuit and semiconductor device 公开/授权日:2009-09-15
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