发明申请
- 专利标题： Methods of forming stress enhanced PMOS structures
- 专利标题（中）： 形成应力增强的PMOS结构的方法
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申请号： US11105215申请日： 2005-04-12
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公开(公告)号： US20060226453A1公开(公告)日： 2006-10-12
- 发明人: Everett Wang , Martin Giles , Philippe Matagne , Roza Kotlyar , Borna Obradovic , Mark Stettler
- 申请人： Everett Wang , Martin Giles , Philippe Matagne , Roza Kotlyar , Borna Obradovic , Mark Stettler
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336
摘要：
Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a gate structure disposed on a substrate comprising at least one recess, wherein a channel region is in a direction, and then forming a compressive layer in the at least one recess.
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