Invention Application
US20060108324A1 Process for removing a residue from a metal structure on a semiconductor substrate
有权
用于从半导体衬底上的金属结构去除残余物的方法
- Patent Title: Process for removing a residue from a metal structure on a semiconductor substrate
- Patent Title (中): 用于从半导体衬底上的金属结构去除残余物的方法
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Application No.: US10995025Application Date: 2004-11-22
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Publication No.: US20060108324A1Publication Date: 2006-05-25
- Inventor: Ronald Gottzein , Jens Bachmann , Dirk Efferenn , Uwe Kahler , Chung-Hsin Lin , Wen-Bin Lin , Lee Donohue
- Applicant: Ronald Gottzein , Jens Bachmann , Dirk Efferenn , Uwe Kahler , Chung-Hsin Lin , Wen-Bin Lin , Lee Donohue
- Main IPC: C23G1/00
- IPC: C23G1/00 ; H01L21/302 ; B44C1/22
Abstract:
The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.
Public/Granted literature
- US07413993B2 Process for removing a residue from a metal structure on a semiconductor substrate Public/Granted day:2008-08-19
Information query
