Invention Application
- Patent Title: Methods for erasing flash memory
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Application No.: US11215963Application Date: 2005-08-31
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Publication No.: US20050286313A1Publication Date: 2005-12-29
- Inventor: Andrei Mihnea , Chun Chen
- Applicant: Andrei Mihnea , Chun Chen
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Main IPC: G11C16/02
- IPC: G11C16/02 ; G11C11/34 ; G11C16/06 ; G11C16/14 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792
Abstract:
Methods for erasing flash memory using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
Public/Granted literature
- US07203098B2 Methods of erasing flash memory Public/Granted day:2007-04-10
Information query
