Invention Application
US20050226033A1 Composite storage circuit and semiconductor device having the same composite storage circuit
失效
具有相同复合存储电路的复合存储电路和半导体器件
- Patent Title: Composite storage circuit and semiconductor device having the same composite storage circuit
- Patent Title (中): 具有相同复合存储电路的复合存储电路和半导体器件
-
Application No.: US10522316Application Date: 2003-07-22
-
Publication No.: US20050226033A1Publication Date: 2005-10-13
- Inventor: Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
- Applicant: Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
- Applicant Address: JP Tokyo 141-0001
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo 141-0001
- Priority: JP2002-220423 20020729
- International Application: PCT/JP03/09295 WO 20030722
- Main IPC: G11C11/41
- IPC: G11C11/41 ; G11C11/00 ; G11C11/14 ; G11C14/00 ; G11C16/02

Abstract:
An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by storing information equal to storage information stored in the volatile storage circuit into the nonvolatile storage circuit, the compound storage circuit being capable of reducing power consumption, and a semiconductor device including the compound storage circuit. According to the present invention, in a compound storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and a semiconductor device including the compound storage circuit, a determination circuit for comparing first storage information stored in the volatile storage circuit with second storage information that has already been stored in the nonvolatile storage circuit when storage information stored in the volatile storage circuit is written into the nonvolatile storage circuit is provided, and the first storage information is written into the nonvolatile storage circuit only when the first storage information is not equal to the second storage information.
Public/Granted literature
- US07130224B2 Composite storage circuit and semiconductor device having the same composite storage circuit Public/Granted day:2006-10-31
Information query