Invention Application
US20050214966A1 Method of fabricating probe for spm having fet channel structure utilizing self-aligned fabrication
失效
使用自对准制造的具有胎儿通道结构的spm探针的制造方法
- Patent Title: Method of fabricating probe for spm having fet channel structure utilizing self-aligned fabrication
- Patent Title (中): 使用自对准制造的具有胎儿通道结构的spm探针的制造方法
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Application No.: US10513170Application Date: 2003-04-26
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Publication No.: US20050214966A1Publication Date: 2005-09-29
- Inventor: Hong-Sik Park , Hyun-Jung Shin , Ju-Hwan Jung
- Applicant: Hong-Sik Park , Hyun-Jung Shin , Ju-Hwan Jung
- Priority: KR10-2002-0025399 20020508
- International Application: PCT/KR03/00852 WO 20030426
- Main IPC: G01Q60/60
- IPC: G01Q60/60 ; G01Q70/16 ; G01Q80/00 ; G01Q90/00 ; H01L29/78 ; H01L21/00

Abstract:
Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.
Public/Granted literature
- US07008811B2 Method of fabricating probe for SPM having FET channel structure utilizing self-aligned fabrication Public/Granted day:2006-03-07
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