Invention Application
- Patent Title: Non-volatile semiconductor memory device, method for manufacturing same and method for controlling same
- Patent Title (中): 非易失性半导体存储器件及其制造方法及其控制方法
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Application No.: US10931905Application Date: 2004-09-01
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Publication No.: US20050042813A1Publication Date: 2005-02-24
- Inventor: Teiichiro Nishizaka
- Applicant: Teiichiro Nishizaka
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Priority: JP2002-225085 20020801
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/16 ; G11C16/26 ; H01L21/8246 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L21/00 ; H01L21/8238

Abstract:
A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second storage nodes, a third storage node provided on the substrate and a third gate electrode provided on the third storage node. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. A storage node, Node 1, of interest, with the control gate channel as a drain, is read without the intermediary of the second node, which is not of interest, such that reading of Node 1 unaffected by the second node.
Public/Granted literature
- US06977209B2 Method of manufacturing non-volatile semiconductor memory device and method for controlling same Public/Granted day:2005-12-20
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