Invention Application
US20050042813A1 Non-volatile semiconductor memory device, method for manufacturing same and method for controlling same 有权
非易失性半导体存储器件及其制造方法及其控制方法

Non-volatile semiconductor memory device, method for manufacturing same and method for controlling same
Abstract:
A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second storage nodes, a third storage node provided on the substrate and a third gate electrode provided on the third storage node. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. A storage node, Node 1, of interest, with the control gate channel as a drain, is read without the intermediary of the second node, which is not of interest, such that reading of Node 1 unaffected by the second node.
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