发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10834928申请日： 2004-04-30
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公开(公告)号： US20050001251A1公开(公告)日： 2005-01-06
- 发明人: Hiroshi Itokawa , Koji Yamakawa , Katsuaki Natori
- 申请人： Hiroshi Itokawa , Koji Yamakawa , Katsuaki Natori
- 优先权： JP2003-129072 20030507
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/02 ; H01L21/8246 ; H01L27/105 ; H01L27/108 ; H01L27/115
摘要：
A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.
公开/授权文献
- US07122851B2 Semiconductor device with perovskite capacitor 公开/授权日：2006-10-17
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