The present invention is to provide a magnetoresistance effect type head which well generates the information stored in a memory device at high memory density while limiting the generation of Barkhausen noises. The magnetoresistance effect type head comprises a magnetoresistance effect element which contains a free magnetic layer having an overhang portion which is overhung and spread in left and right directions and is changed in resistance by a change in the azimuth of the magnetization of the free magnetic layer, and paired upper and lower magnetic wall control layers which are in contact with the upper and under surfaces of the left and right overhang portions of the free magnetic layer respectively and restrict the movement of the magnetic wall of the free magnetic layer.