Invention Grant
- Patent Title: Semiconductor device, manufacturing method of the semiconductor device, or display device including the semiconductor device
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Application No.: US18133622Application Date: 2023-04-12
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Publication No.: US12170337B2Publication Date: 2024-12-17
- Inventor: Yoshiaki Oikawa , Nobuharu Ohsawa , Masami Jintyou , Yasutaka Nakazawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2015-227399 20151120
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/28 ; H01L27/12 ; H01L29/04 ; H01L29/45 ; H01L29/49
Abstract:
The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.
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Information query
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