- 专利标题: Semiconductor device with protection liners and air gaps and method for fabricating the same
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申请号: US17698509申请日: 2022-03-18
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公开(公告)号: US12119302B2公开(公告)日: 2024-10-15
- 发明人: Te-Yin Chen
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei
- 代理商 Xuan Zhang
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/768 ; H01L23/532
摘要:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having plurality of contacts, a plurality of composite plugs positioned above the plurality of contacts, a plurality of metal spacers positioned above the substrate; and a plurality of air gaps positioned above the substrate. At least one of the plurality of composite plugs includes a protection liner having a U-shaped profile and a metal plug in the protection liner, and the protection liner is in direct contact with one of the plurality of contacts.
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