- 专利标题： Silicon carbide substrate
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申请号： US17611138申请日： 2020-03-19
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公开(公告)号： US12104278B2公开(公告)日： 2024-10-01
- 发明人: Tsubasa Honke , Kyoko Okita
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： JP 19093883 2019.05.17
- 国际申请： PCT/JP2020/012435 2020.03.19
- 国际公布： WO2020/235205A 2020.11.26
- 进入国家日期： 2021-11-13
- 主分类号： C30B29/06
- IPC分类号： C30B29/06 ; C30B29/36 ; C30B29/64 ; C30B33/00 ; H01L21/02 ; H01L29/16 ; H01L29/36 ; C09G1/02 ; C09G1/04 ; C30B23/00 ; C30B23/02
摘要：
A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.
公开/授权文献
- US20220220637A1 SILICON CARBIDE SUBSTRATE 公开/授权日：2022-07-14
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