- 专利标题: Electrostatic discharge protection
-
申请号: US17865809申请日: 2022-07-15
-
公开(公告)号: US12100947B2公开(公告)日: 2024-09-24
- 发明人: Chia-Hui Chen , Chia-Jung Chang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: FOLEY & LARDNER LLP
- 主分类号: H02H9/04
- IPC分类号: H02H9/04 ; H01L27/02
摘要:
Disclosed herein are related to a device for electrostatic discharge (ESD) protection. In one aspect, a device includes an ESD detector to detect an ESD at a pad. In one aspect, the device includes P-type transistors and N-type transistors connected in series with each other. In one aspect, the drive circuit is configured to provide an output signal to the pad. In one aspect, the device includes a first protection circuit operating in a power domain. In one aspect, in response to the ESD detected by the ESD detector, the first protection circuit is configured to disable the P-type transistors. In one aspect, the device includes a second protection circuit operating in another power domain. In one aspect, in response to the ESD detected by the ESD detector, the second protection circuit is configured to disable the N-type transistors.
公开/授权文献
- US20230327429A1 ELECTROSTATIC DISCHARGE PROTECTION 公开/授权日:2023-10-12
信息查询