- 专利标题： Ruthenium-based liner for a copper interconnect
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申请号： US17446398申请日： 2021-08-30
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公开(公告)号： US12094770B2公开(公告)日： 2024-09-17
- 发明人: Yao-Min Liu , Ming-Yuan Gao , Ming-Chou Chiang , Shu-Cheng Chin , Huei-Wen Hsieh , Kai-Shiang Kuo , Yen-Chun Lin , Cheng-Hui Weng , Chun-Chieh Lin , Hung-Wen Su
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/304 ; H01L23/522 ; H01L23/532
摘要：
In some implementations, one or more semiconductor processing tools may form a via within a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a ruthenium-based liner within the via. The one or more semiconductor processing tools may deposit, after depositing the ruthenium-based liner, a copper plug within the via.
公开/授权文献
- US20230068398A1 RUTHENIUM-BASED LINER FOR A COPPER INTERCONNECT 公开/授权日：2023-03-02
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