- 专利标题： Magnetic tunnel junction device and method of forming the same
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申请号： US17377737申请日： 2021-07-16
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公开(公告)号： US12082510B2公开(公告)日： 2024-09-03
- 发明人: Chih-Fan Huang , Kai-Wen Cheng , Chen-Chiu Huang , Dian-Hau Chen , Yen-Ming Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H10N50/80
- IPC分类号： H10N50/80 ; H10B61/00 ; H10N50/01 ; H10N50/10
摘要：
A semiconductor device comprises a first conductive feature on a semiconductor substrate, a bottom electrode on the first conductive feature, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. A spacer contacts a sidewall of the top electrode, a sidewall of the MTJ stack, and a sidewall of the bottom electrode. A conductive feature contacts the top electrode.
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