Invention Grant
- Patent Title: Cell region including portion of conductor of another cell region and semiconductor device include the same
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Application No.: US18362902Application Date: 2023-07-31
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Publication No.: US12079561B2Publication Date: 2024-09-03
- Inventor: Fong-Yuan Chang , Chin-Chou Liu , Sheng-Hsiung Chen , Po-Hsiang Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US16445931 2019.06.19
- Main IPC: G06F30/398
- IPC: G06F30/398 ; G03F1/70 ; G06F30/392 ; G06F30/394

Abstract:
A cell region of a semiconductor device, the cell region including: components (representing a first circuit) including alpha info conductors and dummy conductors which are substantially collinear correspondingly with reference tracks, regarding the first circuit, the alpha info conductors beipng correspondingly for one or more input and/or output signals, or one or more internal signals, and for a majority of the reference tracks, first ends correspondingly of the alpha info conductors or the dummy conductors being aligned and proximal to a first side of the cell region; a first alpha info conductor being on a first reference track and being an intra-cell conductor which does not extend beyond the first side nor a second side of the cell region; and a portion of a first beta info conductor of a second circuit (represented by components of an external cell region) being on the first reference track.
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