- 专利标题： Semiconductor device with strain relaxed layer
-
申请号： US17683288申请日： 2022-02-28
-
公开(公告)号： US12046639B2公开(公告)日： 2024-07-23
- 发明人: Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN 1911042514.2 2019.10.30
- 分案原申请号： US16708448 2019.12.10
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/778
摘要：
A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
公开/授权文献
- US20220320292A1 SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER 公开/授权日：2022-10-06
信息查询
IPC分类:
