A static random-access memory (SRAM) includes a SRAM cell module, comprising a plurality of SRAM cell partitions, and an initialization register, containing data configured to control initialization of at least some of the plurality of partitions during an initialization phase. The SRAM also includes a control module coupled with the SRAM cell module and the initialization register, configured to read the initialization register during the initialization phase, and to selectively initialize a portion of the plurality of SRAM cell partitions, based at least in part on the data contained within the initialization register.