- 专利标题： Semiconductor devices including gate structures with gate spacers
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申请号： US17371907申请日： 2021-07-09
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公开(公告)号： US12034056B2公开(公告)日： 2024-07-09
- 发明人: Shih-Yao Lin , Kuei-Yu Kao , Chen-Ping Chen , Chih-Chung Chiu , Chih-Han Lin , Ming-Ching Chiang , Chao-Cheng Chen
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： FOLEY & LARDNER LLP
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/02 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/786
摘要：
A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion. The lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and comprises a first layer and a second layer. The first layer is in contact with a first portion of the sidewall and the second layer is in contact with a second portion of the sidewall.
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