- 专利标题： Transistor, integrated circuit, and manufacturing method of transistor
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申请号： US18165936申请日： 2023-02-08
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公开(公告)号： US12021154B2公开(公告)日： 2024-06-25
- 发明人: Marcus Johannes Henricus Van Dal
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： JCIPRNET
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/12 ; H01L29/06 ; H01L29/41 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H10B61/00 ; H10B63/00
摘要：
A transistor includes a first gate structure, a channel layer, and source/drain contacts. The first gate structure includes metallic nanosheets and a gate dielectric layer wrapping around the metallic nanosheets. The channel layer wraps around a portion of the gate dielectric layer. The source/drain contacts are aside the metallic nanosheets. The source/drain contacts are electrically connected to the channel layer.
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