- 专利标题： Transistor structure having improved electrode conductance and method for manufacturing the same
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申请号： US17737504申请日： 2022-05-05
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公开(公告)号： US12021150B2公开(公告)日： 2024-06-25
- 发明人: Ming-Yen Chuang , Katherine H. Chiang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/10 ; H01L29/417 ; H01L29/49 ; H01L29/66
摘要：
A semiconductor device includes a substrate and a transistor structure disposed on the substrate. The transistor structure includes a channel region and a source/drain electrode disposed on the channel region. The channel region includes a lower channel portion and a plurality of upper channel portions protruding from the lower channel portion into the source/drain electrode to form an uneven interface between the channel region and the source/drain electrode.
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