- 专利标题： Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material
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申请号： US17224003申请日： 2021-04-06
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公开(公告)号： US12020979B2公开(公告)日： 2024-06-25
- 发明人: Gurtej S. Sandhu , Sony Varghese , John A. Smythe , Hyun Sik Kim
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 分案原申请号： US15650194 2017.07.14
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; B29C41/08 ; H01L21/02 ; H01L21/288 ; H01L21/32 ; H01L21/67 ; H01L21/768 ; B29C35/08 ; B29K83/00 ; B32B3/26
摘要：
Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.
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