- 专利标题: Predicting a bandgap reference output voltage based on a model to trim a bandgap reference circuit
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申请号: US17452602申请日: 2021-10-28
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公开(公告)号: US11940832B2公开(公告)日: 2024-03-26
- 发明人: Matthias Rose , Maxim Kulesh , Neha Goel
- 申请人: NXP B.V.
- 申请人地址: NL Eindhoven
- 专利权人: NXP B.V.
- 当前专利权人: NXP B.V.
- 当前专利权人地址: NL Eindhoven
- 主分类号: G05F3/30
- IPC分类号: G05F3/30
摘要:
A first error is determined between a bandgap reference output voltage of a bandgap reference circuit at a first temperature and a target voltage. A second temperature of the bandgap reference circuit is measured. A bandgap reference output voltage of the bandgap reference circuit is predicted at the second temperature and based on the first error. A second error is determined between the bandgap reference output voltage and the target voltage. A trim parameter of the bandgap reference circuit is determined based on the second error. The bandgap reference circuit is set with the trim parameter, where a third error between a bandgap reference output voltage of the bandgap reference with the trim parameter is less than the second error.
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