- 专利标题: Ion implanter and ion implantation method
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申请号: US18087277申请日: 2022-12-22
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公开(公告)号: US11923167B2公开(公告)日: 2024-03-05
- 发明人: Hiroshi Matsushita
- 申请人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 当前专利权人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Michael Best & Friedrich LLP
- 优先权: JP 19051015 2019.03.19
- 主分类号: H01J37/244
- IPC分类号: H01J37/244 ; G01T3/00 ; H01J37/147 ; H01J37/317
摘要:
An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.
公开/授权文献
- US20230139482A1 ION IMPLANTER AND ION IMPLANTATION METHOD 公开/授权日:2023-05-04
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