Disclosed is a method for cutting dielectric or semiconducting material with a laser. The method includes the following steps: emission of a laser beam including at least one burst of N femtoseconds laser pulses; spatial separation of the laser beam into a first split beam having a first energy, and respectively, a second split beam having a second energy; spatial concentration of energy of the first split beam in a first zone of the material, respectively, of the second split beam in a second zone of the material, the first zone and the second zone being separate and staggered by a distance dx; and adjustment of the distance between the first zone and the second zone in such a way as to initiate a straight micro-fracture oriented between the first zone and the second zone.