Invention Grant
- Patent Title: Reflective mask blank, reflective mask and method of manufacturing semiconductor device
-
Application No.: US17946709Application Date: 2022-09-16
-
Publication No.: US11880130B2Publication Date: 2024-01-23
- Inventor: Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JP 17040043 2017.03.03 JP 17107394 2017.05.31
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/26

Abstract:
Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
Public/Granted literature
- US20230244135A1 REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2023-08-03
Information query