- 专利标题： Memory including a plurality of portions and used for reducing program disturbance and program method thereof
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申请号： US18094288申请日： 2023-01-06
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公开(公告)号： US11875862B2公开(公告)日： 2024-01-16
- 发明人: Yali Song , XiangNan Zhao , Ying Cui
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 代理机构： BAYES PLLC
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; G11C16/08 ; G11C16/10
摘要：
A memory device may include a first set of word lines in a first zone and a second set of word lines in a second zone. When programming memory cells coupled to a first target word line of the first set of word lines, a first pass voltage may be applied to at least one word line of the first set of word lines. When programming memory cells coupled to a second target word line of the second set of word lines, a second pass voltage may be applied to at least one word line of the second set of word lines. The at least one word line of the first set of word lines and the at least one word line of the second set of word lines have been programmed. The second pass voltage may be higher than the first pass voltage.
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