- 专利标题： Internal and external data transfer for stacked memory dies
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申请号： US17502792申请日： 2021-10-15
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公开(公告)号： US11869626B2公开(公告)日： 2024-01-09
- 发明人: Kang-Yong Kim , Hyunyoo Lee
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： G11C7/10
- IPC分类号： G11C7/10
摘要：
Some memory dies in a stack can be connected externally to the stack and other memory dies in the stack can be connected internally to the stack. The memory dies that are connected externally can act as interface dies for other memory dies that are connected internally thereto. The external connections can be used for transmitting signals indicative of data to and/or from the memory dies while the memory dies in the stack can be connected by a cascading connection for transmission of other signals such as command, address, power, ground, etc.
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