- 专利标题: Optical device structure using GaN substrates and growth structures for laser applications
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申请号: US17094662申请日: 2020-11-10
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公开(公告)号: US11862937B1公开(公告)日: 2024-01-02
- 发明人: James W. Raring
- 申请人: Soraa Laser Diode, Inc.
- 申请人地址: US CA Goleta
- 专利权人: KYOCERA SLD Laser, Inc.
- 当前专利权人: KYOCERA SLD Laser, Inc.
- 当前专利权人地址: US CA Goleta
- 代理机构: KILPATRICK TOWNSEND & STOCKTON LLP
- 分案原申请号: US14601651 2015.01.21
- 主分类号: H01S5/22
- IPC分类号: H01S5/22 ; B82Y20/00 ; H01S5/02 ; H01S5/20 ; H01S5/32 ; H01S5/343 ; H01S5/028 ; H01S5/10 ; H01S5/00 ; H01S5/40
摘要:
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
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