- 专利标题: Method for fabricating (LED) dice using semiconductor structures on a substrate and laser lift-off to a receiving plate
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申请号: US17740729申请日: 2022-05-10
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公开(公告)号: US11862754B2公开(公告)日: 2024-01-02
- 发明人: Chen-Fu Chu , Shih-Kai Chan , Yi-Feng Shih , David Trung Doan , Trung Tri Doan , Yoshinori Ogawa , Kohei Otake , Kazunori Kondo , Keiji Ohori , Taichi Kitagawa , Nobuaki Matsumoto , Toshiyuki Ozai , Shuhei Ueda
- 申请人: SemiLEDs Corporation , SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: TW Chu-Nan
- 专利权人: SemiLEDs Corporation,Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: SemiLEDs Corporation,Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: TW Chu-Nan; JP Tokyo
- 代理商 Stephen A. Gratton
- 主分类号: H01L33/20
- IPC分类号: H01L33/20 ; H01L33/00 ; H01L33/44
摘要:
A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.
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