发明授权
- 专利标题: Integrated circuit conductive line arrangement for circuit structures, and method
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申请号: US17459756申请日: 2021-08-27
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公开(公告)号: US11862562B2公开(公告)日: 2024-01-02
- 发明人: Chih-Yu Lai , Hui-Zhong Zhuang , Chih-Liang Chen , Li-Chun Tien
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L29/417 ; H01L21/8238 ; H01L23/522 ; H01L27/092 ; H01L23/552
摘要:
A circuit structure includes a substrate that includes a first transistor stack over the substrate that includes: a first transistor where the first transistor is a first conductivity type; and a second transistor, above the first transistor, where the second transistor is a second conductivity type different from the first conductivity type. The structure also includes a plurality of first conductive lines in a first metal layer above the first transistor stack, the plurality of first conductive lines electrically connected to the first transistor stack. The structure also includes a plurality of second conductive lines in a second metal layer below the substrate and underneath the first transistor stack, the plurality of second conductive lines electrically connected to the first transistor stack. The plurality of first conductive lines are configured asymmetrically with respect to the plurality of second conductive lines.
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