- 专利标题: Non-volatile memory device and control method
-
申请号: US17965527申请日: 2022-10-13
-
公开(公告)号: US11862230B2公开(公告)日: 2024-01-02
- 发明人: Jianquan Jia , Ying Cui , Kaikai You
- 申请人: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址: CN Wuhan
- 专利权人: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址: CN Wuhan
- 代理机构: BAYES PLLC
- 主分类号: G11C8/00
- IPC分类号: G11C8/00 ; G11C11/408 ; G11C11/4074 ; G11C11/4094 ; G11C11/4099 ; G11C11/419
摘要:
A non-volatile memory device includes a plurality of word lines and a control circuit. The control circuit is configured to apply a first word line pre-pulse signal of a plurality of word line pre-pulse signals to a first group of the plurality of word lines, apply a second word line pre-pulse signal of the plurality of word line pre-pulse signals to a second group of the plurality of word lines during a pre-charge period, and apply a third word line pre-pulse signal of the plurality of word lines pre-pulse signals to a third group of the plurality of word lines during the pre-charge period. A voltage level of the second word line pre-pulse signal is greater than that of the first word line pre-pulse signal, and a voltage level of the third word line pre-pulse signal is greater than that of the second word line pre-pulse signal.
公开/授权文献
- US20230030801A1 NON-VOLATILE MEMORY DEVICE AND CONTROL METHOD 公开/授权日:2023-02-02
信息查询