- 专利标题: Capacitors with nanoislands on conductive plates
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申请号: US16560647申请日: 2019-09-04
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公开(公告)号: US11855125B2公开(公告)日: 2023-12-26
- 发明人: Srinivas Pietambaram , Brandon C. Marin , Jeremy Ecton , Hiroki Tanaka , Frank Truong
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01G4/008 ; H01G4/28 ; H01G4/12 ; H01L49/02
摘要:
Embodiments herein relate to a capacitor device or a manufacturing process flow for creating a capacitor that includes nanoislands within a package. The capacitor a first conductive plate having a first side and a second side opposite the first side and a second conductive plate having a first side and a second side opposite the first side where the first side of the first conductive plate faces the first side of the second conductive plate. A first plurality of nanoislands is distributed on the first side of the first conductive plate and a second plurality of nanoislands is distributed on the first side of the second conductive plate, where the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor. The nanoislands may be applied to the conductive plates using a sputtering technique.
公开/授权文献
- US20210066447A1 CAPACITORS WITH NANOISLANDS ON CONDUCTIVE PLATES 公开/授权日:2021-03-04
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