Invention Grant
- Patent Title: Semiconductor device and method
-
Application No.: US17385222Application Date: 2021-07-26
-
Publication No.: US11848288B2Publication Date: 2023-12-19
- Inventor: Tzu-Sung Huang , Chen-Hua Yu , Hung-Yi Kuo , Hao-Yi Tsai , Ming Hung Tseng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15881362 2018.01.26
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L23/485 ; H01L23/552 ; H01L23/31 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L49/02

Abstract:
In an embodiment, a device includes: a conductive shield on a first dielectric layer; a second dielectric layer on the first dielectric layer and the conductive shield, the first and second dielectric layers surrounding the conductive shield, the second dielectric layer including: a first portion disposed along an outer periphery of the conductive shield; a second portion extending through a center region of the conductive shield; and a third portion extending through a channel region of the conductive shield, the third portion connecting the first portion to the second portion; a coil on the second dielectric layer, the coil disposed over the conductive shield; an integrated circuit die on the second dielectric layer, the integrated circuit die disposed outside of the coil; and an encapsulant surrounding the coil and the integrated circuit die, top surfaces of the encapsulant, the integrated circuit die, and the coil being level.
Public/Granted literature
- US20210358870A1 Semiconductor Device and Method Public/Granted day:2021-11-18
Information query
IPC分类: