- 专利标题: Semiconductor device having multiple conductive members
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申请号: US17399318申请日: 2021-08-11
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公开(公告)号: US11837637B2公开(公告)日: 2023-12-05
- 发明人: Hiro Gangi , Tomoaki Inokuchi , Yusuke Kobayashi , Hiroki Nemoto
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权: JP 21006875 2021.01.20
- 主分类号: H01L29/40
- IPC分类号: H01L29/40 ; H01L29/78
摘要:
According to one embodiment, a semiconductor device includes first to third electrodes, first and second conductive members, a semiconductor member, and a first insulating member. The first conductive member is electrically connected with the second electrode or is electrically connectable with the second electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first to fourth partial regions. The third partial region is between the first and second partial regions. The second semiconductor region is between the third partial region and the third semiconductor region. The fourth partial region is between the third partial region and the second semiconductor region. At least a portion of the second semiconductor region is between the second conductive member and the third electrode. The second conductive member is electrically insulated from the second and third electrodes. The first insulating member includes first to third insulating regions.
公开/授权文献
- US20220231135A1 SEMICONDUCTOR DEVICE 公开/授权日:2022-07-21
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