- 专利标题: Interactive memory self-refresh control
-
申请号: US17513090申请日: 2021-10-28
-
公开(公告)号: US11783885B2公开(公告)日: 2023-10-10
- 发明人: Kang-Yong Kim , Hyun Yoo Lee
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Colby Nipper PLLC
- 主分类号: G11C11/406
- IPC分类号: G11C11/406 ; G11C7/10
摘要:
Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM), and an associated host device are described. The memory device includes control circuitry that can determine an operational status of the memory device (e.g., whether the memory device is currently performing a self-refresh operation). The control circuitry can also transmit a signal indicative of the operational status to the host device in response to receiving a command directing the memory device to exit a self-refresh mode. The host device can operate based on the signal. The signal may therefore allow the memory device, the host device, or both to manage operations, including whether to send, receive, or process commands and data read/write requests during times that may be associated with self-refresh operations.
公开/授权文献
- US20220139448A1 Interactive Memory Self-Refresh Control 公开/授权日:2022-05-05
信息查询