Invention Grant
- Patent Title: Burst mode for self-refresh
-
Application No.: US17459446Application Date: 2021-08-27
-
Publication No.: US11783883B2Publication Date: 2023-10-10
- Inventor: Kang-Yong Kim , Hyun Yoo Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Colby Nipper PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/406

Abstract:
Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM) and an associated host device are described. The memory device and the host device can include control logic that enables the host device to transmit a burst value to the memory device, which may enable the memory device, the host, or both, to manage refresh operations during a normal operation mode or a self-refresh mode. The burst value can be transmitted to the memory device in association with a command (e.g., a command directing the memory device to enter the self-refresh mode). The burst value can specify a number of self-refresh operations to be initiated at the memory device in response to receiving the command. When the specified number of self-refresh operations are completed, regular self-refresh operations may begin, with an internal self-refresh timer counting an interval to the next self-refresh operation.
Public/Granted literature
- US20220068365A1 Burst Mode for Self-Refresh Public/Granted day:2022-03-03
Information query