Invention Grant
- Patent Title: Method of measuring aberration and electron microscope
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Application No.: US17576016Application Date: 2022-01-14
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Publication No.: US11764029B2Publication Date: 2023-09-19
- Inventor: Shigeyuki Morishita , Ryusuke Sagawa , Fuminori Uematsu , Tomohiro Nakamichi , Keito Aibara
- Applicant: JEOL Ltd.
- Applicant Address: JP Tokyo
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JP Tokyo
- Agency: THE WEBB LAW FIRM
- Priority: JP 21005612 2021.01.18
- Main IPC: H01J37/153
- IPC: H01J37/153 ; H01J37/10 ; H01J37/26
Abstract:
A method of measuring an aberration in an electron microscope includes: acquiring an image for measuring the aberration in the electron microscope; and measuring the aberration by using the image. In measuring the aberration, a direction of defocusing is specified based on a residual aberration that is uniquely determined by a configuration of an optical system of the electron microscope and an optical condition of the optical system.
Public/Granted literature
- US20220230838A1 Method of Measuring Aberration and Electron Microscope Public/Granted day:2022-07-21
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