Invention Grant
- Patent Title: Method for manufacturing semiconductor device
-
Application No.: US17074287Application Date: 2020-10-19
-
Publication No.: US11749756B2Publication Date: 2023-09-05
- Inventor: Che-Yu Lin , Ming-Hua Yu , Tze-Liang Lee , Chan-Lon Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/762 ; H01L29/78 ; H01L21/02 ; H01L23/544 ; H01L21/265 ; H01L21/324 ; H01L29/06 ; H01L29/10 ; H01L29/167
Abstract:
A method includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the implanted region. The top surface of the implanted region is baked after the clean treatment. An epitaxial layer is formed on the top surface of the substrate. The epitaxial layer is patterned to form a fin.
Public/Granted literature
- US20210050451A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-02-18
Information query
IPC分类:
