- 专利标题: Semiconductor device
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申请号: US17529885申请日: 2021-11-18
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公开(公告)号: US11677412B2公开(公告)日: 2023-06-13
- 发明人: Tomohiko Ebata
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP 2020194037 2020.11.24
- 主分类号: H03M1/66
- IPC分类号: H03M1/66 ; H03M1/46 ; H03M1/12
摘要:
A semiconductor device performs sequential comparison of an analog input signal and a reference voltage to digitally convert the analog input signal. The semiconductor device includes an upper DAC generating a high-voltage region of the reference voltage based on a predetermined code, a lower DAC generating a low-voltage region of the reference voltage based on the code, and an injection DAC having the same configuration as that of the lower DAC and adjusting the low-voltage region of the reference voltage.
公开/授权文献
- US20220166443A1 SEMICONDUCTOR DEVICE 公开/授权日:2022-05-26
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