- 专利标题： Electronic device including ferroelectric layer
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申请号： US17513050申请日： 2021-10-28
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公开(公告)号： US11677025B2公开(公告)日： 2023-06-13
- 发明人: Yunseong Lee , Jinseong Heo , Sangwook Kim , Sanghyun Jo
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR 20180154694 2018.12.04
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/51 ; H01L29/423 ; H01L21/02 ; H01L29/66 ; H01L29/08 ; H01L21/28 ; H10B51/30 ; H01L27/1159
摘要：
An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.
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