- 专利标题: Film-forming apparatus, film-forming system, and film-forming method
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申请号: US16531782申请日: 2019-08-05
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公开(公告)号: US11664207B2公开(公告)日: 2023-05-30
- 发明人: Masato Shinada , Hiroyuki Toshima
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer; Tanya E. Harkins
- 优先权: JP 2018151673 2018.08.10 JP 2018222067 2018.11.28
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; H01J37/34 ; C23C14/50 ; H01L21/67 ; H01L21/677
摘要:
A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.
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