- 专利标题： Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget
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申请号： US16688344申请日： 2019-11-19
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公开(公告)号： US11658233B2公开(公告)日： 2023-05-23
- 发明人: Kyoung-Keun Lee
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： WOLFSPEED, INC.
- 当前专利权人： WOLFSPEED, INC.
- 当前专利权人地址： US NC Durham
- 代理机构： BakerHostetler
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/205 ; H01L29/40 ; H01L29/47 ; H01L29/423 ; H01L21/02 ; H01L21/285 ; H01L21/311 ; H01L21/765 ; H01L29/66 ; H01L29/20 ; H03F3/21
摘要：
A device including a substrate, a passivation layer, a source, a gate, a drain, and the gate including at least one step portion. Where the at least one step portion is arranged within the passivation layer, the at least one step portion includes at least one first surface and at least one second surface, where the at least one first surface is connected to the at least one second surface, where the gate includes a third surface, and where the at least one step portion is connected to the third surface. A process is also disclosed.
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