Disclosed herein are methods for forming vertical field-effect-transistor (vFET). In some embodiments, a method includes providing a device structure including a plurality of pillars extending from a base layer, forming a capping layer over the device structure, and forming a drain in an upper section of each of the plurality of pillars by performing an angled implant to each of the plurality of pillars. The angled implant may be delivered at a non-zero angle of inclination relative to a perpendicular extending from a top surface of the base layer. The method may further include etching the device structure to remove the capping layer from along a lower section of each of the plurality of pillars, wherein the capping layer remains along the upper section of each of the plurality of pillars.