Invention Grant
- Patent Title: Interconnection structure and semiconductor package including the same
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Application No.: US17099929Application Date: 2020-11-17
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Publication No.: US11637058B2Publication Date: 2023-04-25
- Inventor: Ju-Il Choi , Jumyong Park , Jin Ho An , Chungsun Lee , Teahwa Jeong , Jeonggi Jin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2020-0052231 20200429
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L25/10 ; H01L23/31 ; H01L25/065

Abstract:
An interconnection structure includes a dielectric layer, and a wiring pattern in the dielectric layer. The wiring pattern includes a via body, a first pad body that vertically overlaps the via body, and a line body that extends from the first pad body. The via body, the first pad body, and the line body are integrally connected to each other, and a level of a bottom surface of the first pad body is lower than a level of a bottom surface of the line body.
Public/Granted literature
- US20210343634A1 INTERCONNECTION STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME Public/Granted day:2021-11-04
Information query
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